
Thomas III, Windsor Pipes (Painted Post, NY, US) Application Number: 13 18. A method for using a non-polished glass wafer to thin a silicon

200985- University of Windsor, 401 Sunset Avenue, Windsor, Ontario, Canada N9B 3to the silicon particles in an Al–18.5 wt.%Si alloys were stud

Computer simulation of particle matrix interactions in silicon carbide reinforcedXu, Xiao Qun《University of Windsor》

2008610- Glimmerglass Networks Inc, Kindwall Alexander P, Owens Windsor E, Staker An insulating layer, such as silicon dioxide, electrically isol

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and Katrin Windsor, Founder and Board Member, International Business Circle. Against this backdrop, the 2011 Silicon Flatirons Annual Mile High Tech

2013318-Source: Dissertation Abstracts International, Volume: 39-05, Section: B, page: 2295. Thesis (Ph.D.)--University of Windsor (Canada), 1978

--University of Windsor (Canada), 2005. Recommended Citation Wang, Hongbo., Wear and scuffing resistances of eutectic aluminum-silicon alloys and aluminum

react-text: 202 Through silicon via (TSV) containing interposers have beenAric ShoreyJohn KeechWindsor Thomas

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--University of Windsor (Canada), 1998. Recommended Citation Rausch, Tim.,evaporated cobalt/copper multilayers deposited on silicon(111) and silicon(100

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Quantification of solidification characteristics of aluminum-silicon alloys by thermal analysis. Author Glenn E. Byczynski, University of Windsor Date of

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The study of silicon carbide filled adiprene [microform] /Abstract Vita. Thesis (M.A. Sc.)--University of Windsor, 1977. Includes bibliographical

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Silicon carbide filled urethane as a potential material for high voltage CiccotelliBruno《University of Windsor》